CA3046E general purpose transistor array ? 2014 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 37 7 - 3078 www.americanmicrosemi.com document page 1 of 4 general purpose transistor array one differentially connected pair and three isolated transistor arrays the CA3046E is designed for general purpose, low power applicants for consumer and industrial designs. ? operating curren t range specified: 10 ? a to 10 ma ? rating symbol value unit collector - emitter voltage v ceo 15 vdc collector - base voltage v cbo 20 vdc emitter - base voltage v eb 5.0 vdc collector - substrate voltage v cio 20 vdc collector current - continuous i c 50 madc total power dissipation @ t a = 25 o c derate above 25 o c p d 1.2 10 w mw/ o c operating temperature range t a - 40 to +85 o c storage temperature range t stg - 65 to +150 o c device operating temperature range packag e CA3046E t a = - 40 o to +85 o c plastic dip pin connections pin 13 is connected to substrate and must remain at the lowest circuit potential.
CA3046E general purpose transistor array ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 2 of 4 ele ctrical characteristics (t a = +25 o c, unless otherwise noted.) characteristics symbol min typ max unit static characteristics collector - base breakdown voltage v (br)cbo 20 60 - vdc (i c = 10 ? (br)ceo 15 - - vdc (i c = 1.0 madc) collector - substrate breakdown voltage v (br)cio 20 60 - vdc (i c = 10 ? (br)ebo 5.0 7.0 - vdc (i e = 10 ? cbo - - 40 nadc (v cb = 10 vdc, i e = 0 ) dc current gain h fe - 40 - 140 130 60 - - - - (i c = 10 madc, v ce = 3.0 vdc) (i c = 1.0 madc, v ce = 3.0 vdc) (i c = 10 ? ce = 3.0 vdc) base - emitter voltage v be - - 0.72 0.8 - - vdc (v ce = 3.0 vdc, i e = 1.0 madc) (v ce = 3.0 vdc, i e = 10 madc) input offset current for matched pair q1 and q2 |i io1 C i io2 | - 0.3 2.0 ? ce = 3.0 vdc, i c = 1.0 madc) magnitude of input offset voltage - - 0.5 5.0 mvdc (v ce = 3.0 vdc, i c = 1.0 madc) temperature coefficient of base - emitter voltage v be d t - - 1.9 - mv/ o c (v ce = 3.0 vdc, i c = 1.0 madc) temperature coefficient | v io | d t - 1.0 - ? v/ o c collector - emitter cutoff current i ceo - - 0.5 ? (v ce = 10 vdc, i b = 0) dynamic characteristics low frequency noise figure nf - 3.25 - db (v ce = 3.0 vdc, i c = 100 ? s = 1.0 k?, f = 1.0 khz fe - 110 - - (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 khz) short circuit input impedance h ie - 3.5 - k ? ce = 3.0 vdc, i c = 1.0 madc) open circuit output impedance h oe - 15.6 - ? ce = 3.0 vdc, i c = 1.0 madc) reverse voltage transfer ratio h re - 1.8 - x10 - 4 (v ce = 3.0 vdc, i c = 1.0 madc) forward transfer admittance y fe - 31 C j1.5 - - (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 mhz) input admittance y ie - 0.3 + j0.04 - - (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 mhz) output admittance y oe - 0.001+j0.03 - - (v ce = 3.0 vdc, i c = 1.0 madc, f = 1.0 mhz) current - gain C bandwidth product f t 300 550 - mhz (v ce = 3.0 vdc, i c = 3.0 madc) emitter - ba se capacitance c eb - 0.6 - pf (v eb = 3.0 vdc, i e = 0) collector - base capacitance c cb - 0.58 - pf (v cb = 3.0 vdc, i c = 0) collector - substrate capacitance c ci - 2.8 - pf (v cs = 3.0 vdc, i c = 0)
CA3046E general purpose transistor array ? 2014 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 37 7 - 3078 www.americanmicrosemi.com document page 3 of 4 figure 1. collector cutoff current versus temperature (each transistor) icbd, collector cutoff current (nadc) t a , ambient temperature ( o c) figure 2 . collector cutoff current versus temperature (each transistor) icbd, collector cutoff current (nadc) t a , ambient temperature ( o c) figure 3 . input offset characteristics for q1 and q2 i io , input offset current ( ? adc) i c , collect or current ( mad c ) figure 4 . base - emitter and input offset voltage characteristics v fe , base - emitter voltage (v) i e , emitter current ( m ad c) figure 5 . dc current gain h fe , dc current gain i e , emitter current ( m ad c)
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